The diffusion of Zn into Te-doped samples was studied as a function of time, temperature and Sb over-pressure. The overall Zn profiles, as well as carrier concentration profiles, were determined. The results indicated an inverse dependence of the diffusivity upon the Sb over-pressure, and reflected the operation of an interstitial-substitutional vacancy mechanism. At high Zn concentrations, the profiles indicated the existence of an additional component which was associated with a non-electrically active Zn species that had a small, but highly temperature-dependent, diffusion coefficient.

G.J.Conibeer, A.F.W.Willoughby, C.M.Hardingham, V.K.M.Sharma: Optical Materials, 1996, 6[1-2], 21-5