Spin-on diffusion of Zn into samples in an open tube-furnace was investigated by using a Zn-doped silica film as a diffusion source. Theoretical calculations were carried out which assumed the silica film to be an exhaustible source. Diffusion treatments were performed at 630 or 680C, using undiluted or diluted Zn-containing silica films. It was found that the junction depth exhibited a linear dependence upon the square root of the diffusion time for undiluted films with no source depletion, whereas results which were obtained by diffusion from diluted films clearly reflected depletion effects in an exhaustible diffusion source. The method was also applicable to Ga0.935Al0.065Sb, due to its very small Al content.

C.Heinz: Solid-State Electronics, 1993, 36[12], 1685-8