An extensive review was presented of advances in the use of GaSb-based systems. It detailed all aspects: from bulk crystal growth or epitaxy, post-growth processing to device design. Some current areas of research and development were critically assessed, and their significance with respect to the understanding of basic physical phenomena and practical applicability was addressed. These areas included the role played by defects and impurities in affecting the structural and other properties of the material, and the techniques which were used for surface- and bulk-defect passivation. It was concluded that current knowledge concerning this material was sufficient to explain its basic properties and permit its further application. Among the topics which were listed were: defects and impurities, extended defects, native defects, isotopic effects, self- and impurity diffusion, ion bombardment-induced defects, surface and bulk defect passivation, H-plasma passivation, and the passivation of amorphous hydrogenated material.

P.S.Dutta, H.L.Bhat, V.Kumar: Journal of Applied Physics, 1997, 81[9], 5821-70