Accidentally doped InAs layers were grown, by molecular beam epitaxy, onto semi-insulating GaAs substrates, and were exposed to H plasma. It was found that the diffusivity of H in these layers was high. Hydrogenation led to an order of magnitude increase in the free carrier density. At the same time, defect-related peaks disappeared from the near-bandedge luminescence spectrum. On the other hand, the properties of bulk InAs or those of InAs-on-InAs layers were not altered by exposure to the H plasma. A model which was based upon the passivation, by H, of electronic states which were induced by dislocations in InAs-on-GaAs layers was proposed in order to explain these effects.

B.Theys, S.Kalem, A.Lusson, J.Chevallier, C.Grattepain, M.Stutzmann: Materials Science Forum, 1992, 83-87, 629-34