Atomic H was introduced, into molecular beam epitaxial InAs layers on GaAs substrates, from a plasma source. It was found that the H diffused very rapidly into the material. Its presence modified the electronic transport properties, the near-bandedge luminescence spectra, and the far-infrared reflectivity. The free-carrier density had increased by an order of magnitude after hydrogenation. These effects could be removed by thermal annealing.

B.Theys, A.Lusson, J.Chevallier, C.Grattepain, S.Kalem, M.Stutzmann: Journal of Applied Physics, 1991, 70[3], 1461-6