The existence of interdiffusion, between self-assembled InAs quantum dots and a GaAs substrate, was investigated by using Rutherford back-scattering techniques. These were also useful for determining the value of the average InAs layer thickness. As a result, data on the diffusion of Ga atoms into the dot were obtained.

T.Haga, M.Kataoka, N.Matsumura, S.Muto, Y.Nakata, N.Yokoyama: Japanese Journal of Applied Physics, 1997, 36[2-8B], L1113-5