Migration of Au at temperatures ranging from 400 to 700C was studied by using secondary ion mass spectrometry. Low values were found for the diffusion coefficient; which was equal to 2 x 10-12cm2/s at 550C. By using deep-level transient spectroscopy, Au was found to behave as a shallow donor with a level that was situated at 0.55eV from the conduction band. It was concluded that Au thermal migration from contacts was not the mechanism which was responsible for device degradation.

V.Parguel, P.N.Favennec, M.Gauneau, Y.Rihet, R.Chaplain, H.L'Haridon, C.Vaudry: Journal of Applied Physics, 1987, 62[3], 824-7