Implantation (1.5 x 1014/cm2) of 30keV Be into (x11)A-oriented semi-insulating InP substrates (where x took values of up to 4) was carried out. For comparison, (110)- and (100)-oriented substrates were also implanted. The in-diffusion of Be in (311)A-oriented substrates was lower than that in (100) material.

M.V.Rao, H.B.Dietrich, P.B.Klein, A.Fathimulla, D.S.Simons, P.H.Chi: Journal of Applied Physics, 1994, 75[12], 7774-8