It was pointed out that high-resistivity material could be grown by metalorganic vapor phase epitaxy, using ferrocene as a dopant source. Adjacent Zn-doped layers removed the resistivity of Fe-doped material. The presence of Zn markedly enhanced the out-diffusion of Fe from Fe-doped layers, and into Zn-doped material. It was suggested that interstitial Zn took over the lattice sites of substitutional Fe. The Fe then became interstitial and mobile.

E.W.A.Young, G.M.Fontijn: Applied Physics Letters, 1990, 56[2], 146-7