The annealing behavior of implanted Mg was studied. It was found that the activated fraction of dopants depended markedly upon the implant dose, and upon the substrate temperature during implantation. Low activation of high-dose (1015/cm2) implants was attributed to the effect of pronounced (80%) out-diffusion. A large variation was found, in the apparent activation energy, for implantation temperatures between ambient and 300C.

W.H.Van Berlo, M.Ghaffari, G.Landgren: Journal of Electronic Materials, 1992, 21[4], 431-6