A secondary-ion mass spectroscopic investigation was made of the thermally induced redistribution of Rh in low-pressure metalorganic chemical vapor-deposited InP structures. Control measurements were performed on Fe-doped structures. In the case of alternately Rh-doped InP and undoped InP structures, an upper limit on the Rh diffusion coefficient of about 10-14cm2/s (at 800C) was established. This was much smaller than the Fe diffusivity of about 10-11cm2/s at 750C. No exchange reactions were observed at the interfaces of p-InP and Rh-doped InP structures. Only Rh which was implanted into InP exhibited defect-induced redistribution into amorphous areas.

A.Näser, A.Dadgar, M.Kuttler, R.Heitz, D.Bimberg, J.Y.Hyeon, H.Schumann: Applied Physics Letters, 1995, 67[4], 479-81