Implantation of Si into (x11)A-oriented semi-insulating InP substrates (where x took values of up to 4) was carried out. For comparison, (110)- and (100)-oriented substrates were also implanted. Following 200keV implantation (5 x 1013/cm2), after annealing (850C, 7s), it was found that the InP was always n-type and had a similar sheet resistance regardless of the substrate orientation. No in-diffusion of Si was observed after annealing substrates of any orientation. A similar behavior was observed for Si/B co-implants in InP.

M.V.Rao, H.B.Dietrich, P.B.Klein, A.Fathimulla, D.S.Simons, P.H.Chi: Journal of Applied Physics, 1994, 75[12], 7774-8