The spatial distribution of the charge concentration of InP layers which had been grown onto Si substrates by metalorganic vapor-phase epitaxy was investigated. The concentrations near to the surface, and within the bulk of the layer, were found to be governed by Si doping from the ambient gas. The diffusion of Si across the hetero-interface, which could be partially assisted by dislocations, predominated in a region near to the InP/Si interface. In the vicinity of the hetero-interface, the charge concentration in the InP layer was determined by a strong compensation which was attributed to defects that were caused by a mismatch between the lattice parameters and thermal expansion coefficients of the InP and Si.

A.Bartels, E.Peiner, R.Klockenbrink, A.Schlachetzki: Journal of Applied Physics, 1995, 78[1], 224-8