The lattice location and electrical activity of ion implanted Sn, after rapid thermal annealing, were determined by means of Mössbauer spectroscopic (using 119mSn) and differential Hall resistivity methods, respectively. It was found that the Sn was preferentially located on the In sub-lattice at concentrations below 2 x 1019/cm3; resulting in high electrical activation and mobility. At Sn concentrations which were above this concentration, various electrically inactive Sn complexes were also observed. No sign was found of Sn on P sub-lattice sites.

P.Kringhøj, G.Weyer: Applied Physics Letters, 1993, 62[16], 1973-5