Samples of n-type InP were implanted with Co at 200C. During high-temperature annealing, out-diffusion of the implant was as severe as that for room-temperature implants. In-diffusion of the implant also occurred, but it was not as severe as the out-diffusion. High-temperature annealing of Ti-implanted material resulted in slight Ti in-diffusion, with minimal redistribution or out-diffusion. In the case of high-temperature implants, the lattice quality of the annealed material was close to that of virgin material. Regardless of the ion type, resistivities that were close to the intrinsic limit were measured in implanted and annealed materials.

M.V.Rao, S.M.Gulwadi, S.Mulpuri, D.S.Simons, P.H.Chi, C.Caneau, W.P.Hong, O.W.Holland, H.B.Dietrich: Journal of Electronic Materials, 1992, 21[9], 923-8