Spun-on SiO2 films which contained 1, 2, 6, 22 or 36at%Zn were prepared and were used for p-diffusion into undoped n-type material. It was found that an increasing Zn concentration of the spun-on film led to a higher atomic Zn concentration and diffusion depth. On the basis of the experimental data, the InP/film distribution coefficient was deduced to be 0.012. A higher Zn concentration in the InP resulted in a lower acceptor concentration. The electrical activity of Zn could be significantly increased by means of additional heat treatment.

C.Lauterbach: Semiconductor Science and Technology, 1995, 10[4], 500-3