The diffusivity was measured by using secondary ion mass spectrometry. Deliberately doped metalorganic vapor phase epitaxial layers, as well as ion-implanted samples, were investigated. In addition, resistivity measurements were performed on Fe-doped layers. It was found that the diffusion behavior of Fe was strongly affected by the presence of Zn, and  vice versa. In adjacent regions of Fe-doped and Zn-doped layers, there was a marked interdiffusion of the dopants. The interdiffusion process could be described in terms of a kick-out mechanism in which Fe interstitials kicked out substitutional Zn.

E.W.A.Young, G.M.Fontijn, C.J.Vriezema, P.C.Zalm: Journal of Applied Physics, 1991, 70[7], 3593-9