A low-pressure open-tube system, involving diethylzinc and PH3, was used to study the diffusion of Zn. The Zn and hole concentrations were measured by using secondary ion mass spectrometry and capacitance-voltage etch profiling. It was found that annealing of the samples increased the hole concentration, due to the out-diffusion of interstitial Zn donors.

J.Wisser, M.Glade, H.J.Schmidt, K.Heine: Journal of Applied Physics, 1992, 71[7], 3234-7