Paper eintragenDiethylzinc was used as a p-type dopant source during the chemical beam epitaxial growth of InP. Secondary ion mass spectrometry measurements indicated that very marked Zn diffusion occurred when the Zn concentration appeared to reduce the pyrolytic efficiency of trimethylindium.

W.T.Tsang, F.S.Choa, N.T.Ha: Journal of Electronic Materials, 1991, 20[7], 541-4