The diffusion of Zn was studied by using boat diffusion, diffusion from As- or P-doped spun-on films, or diffusion from In-doped spun-on films. The depth profiles were deduced from junction positions. It was found that the p+/p- junction position depended upon the diffusion method which was used, but not upon the sample growth technique. The p-/n junction position depended upon both factors. Because the amounts of In and P (or of the respective vacancies) differed, it was possible to identify diffusion mechanisms. It was proposed that interstitially diffusing Zn was independently trapped by 2 immobile vacancy centers. These consisted of Zn on VIn in the p+ region, and Zn on VPZnVP in the p- region.

U.König, H.Haspeklo, P.Marschall, M.Kuisl: Journal of Applied Physics, 1989, 65[2], 548-52