It was pointed out that the use of models, which did not involve dopant effects upon the interstitial-substitutional interchange, could lead to the identification of an apparently larger charge state for the interstitial. This was expected to increase the apparent activation energy for diffusion. This increase was approximately equivalent to the Zn solubility activation energy for substrate doping near to the substitutional Zn concentration at the surface.

C.Kazmierski: Journal of Applied Physics, 1988, 64[11], 6573-5