The profiles of Zn in n-type [100] wafers after ampoule diffusion were measured using secondary-ion mass spectrometry, Auger electron spectrometry, differential Hall-effect measurements, capacitance measurements, and scanning electron microscopy. The results could be explained in terms of an interstitial-substitutional mechanism in which the Zn diffused as a singly ionized interstitial and was incorporated into the In sub-lattice as an electrically active substitutional acceptor or as an electrically inactive complex. At Zn concentrations which were lower than the background donor concentration, the profile was cut off as interstitial diffusion broke down. The activation energies for diffusion and solubility were found to be 1.40 and 1.0eV, respectively.

G.J.Van Gurp, P.R.Boudewijn, M.N.C.Kempeners, D.L.A.Tjaden: Journal of Applied Physics, 1987, 61[5], 1846-55