A new spin-on solution was proposed for Zn diffusion into this material. The solution consisted of a Zn-SiO2 sol with a very long shelf-life. After spinning-on the sol, a ZnO/SiO2 film was produced on the InP wafer. It was found that, for a thickness of 150nm, the film acted as an inexhaustible source for short-time (30s, 650C) diffusions.

U.Schade, B.Unger: Semiconductor Science and Technology, 1993, 8[12], 2048-52