The electrical activity and lattice-site locations of Zn atoms which had been diffused into InP were studied by using various characterization techniques. Particle-induced X-ray emission channelling showed that, in InP, most of the Zn atoms were situated in interstitial sites or formed random Zn precipitates which were electrically inactive. The distribution of Zn was shown to depend upon the cooling rate after high-temperature diffusion. The difference between the behaviors of Zn in GaAs and InP could be understood in terms of the amphoteric native defect model. It was also shown that the Fermi level stabilization energy provided a convenient energy reference for the treatment of dopant diffusion at semiconductor hetero-interfaces.

W.Walukiewicz, K.M.Yu, L.Y.Chan, J.Jaklevic, E.E.Haller: Materials Science Forum, 1992, 83-87, 941-6