A study was made of the interfacial quality and thermal interdiffusion of quantum wells which had been grown using hydride vapor phase epitaxy. It was deduced that island and valley structures, with a height of one monolayer and a lateral extent which was of the order of one third of an exciton radius, existed at the interface. The interdiffusivity coefficient was estimated from the photoluminescence peak energy shift at 77K. Values of 2.5 x 10-19 and 1.5 x 10-18cm2/s were deduced for temperatures of 700 and 750C, respectively. These values were more than 100 times higher than those for AlGaAs/GaAs quantum well structures, and more than 100 times smaller than those for InAlAs/InGaAs quantum well structures.

K.Makita, K.Taguti: Superlattices and Microstructures, 1988, 4[1], 101-5