A two-temperature zone method, applied to an InSb substrate plus Cd source system, was used. The diffusion profiles were determined by using capacitance-voltage measurements, and were similar to those which were habitually found for other III-V systems. Linear plots of junction-depth versus the square root of the diffusion time did not pass through the origin. This suggested that the usual interstitial-substitutional model and the conventional Boltzmann-Matano method could not be used to analyze the results. The diffusivity exhibited a maximum as a function of carrier concentration.

S.L.Tu, K.F.Huang, S.J.Yang: Japanese Journal of Applied Physics, 1990, 29[3], 463-7