Bulk single crystals of In1-xGaxSb1-yBiy (where x was between 0 and 0.21 and y was between 0 and 0.005) were grown onto InSb seed crystals by using a rotary Bridgman method. The quality of the crystals was assessed by using optical microscopic, X-ray topographic, 4-crystal X-ray diffractometric, electron-probe micro-analytical, energy-dispersive spectroscopic, and secondary-ion mass spectroscopic techniques. Due to segregation, the compositional ratio of Ga decreased, as the crystals grew. During the growth of InGaSbBi, Ga diffused into the InSb seed. For comparison, InSb1-yBiy (where y was between 0 and 0.05) and In1-xGaxSb (where x was between 0 and 0.16) were grown on InSb. It was found that Bi did not diffuse into InSb without Ga, whereas Ga diffused without Bi. The incorporation of Ga produced excess In and led to the formation of InBi domains.

Y.Hayakawa, M.Ando, T.Matsuyama, E.Hamakawa, T.Koyama, S.Adachi, K.Takahashi, V.G.Lifshits, M.Kumagawa: Journal of Applied Physics, 1994, 76[2], 858-64