Samples of p-type 6H material which had been subjected to 1.7MeV electron irradiation were studied by using deep-level transient spectroscopy. Two deep hole traps were observed at Ev+0.55 and Ev+0.78eV. They were identified as being 2 different defects because they have differing thermal behaviours. These defects annealed out at 200 to 500C, and were distinct from the main defects which were observed in electron-irradiated n-type material.

A Deep-Level Transient Spectroscopic Study of Electron Irradiation-Induced Deep Levels in p-Type 6H-SiC. M.Gong, S.Fung, C.D.Beling, Z.You: Journal of Applied Physics, 1999, 85[10], 7120-2