The diffusion of In markers at 900C was measured in undoped and Te-doped epilayers which had been prepared by using organometallic vapor-phase epitaxy. It was found that the diffusivity was a linear function of electron concentrations ranging from 2 x 1017 to 1.5 x 1019/cm3. It was concluded that the results were consistent with the interdiffusion of AlAs and GaAs superlattices. Also, the In and Al diffusivities at 900C were essentially identical; within experimental error. The results strongly suggested that group-III interdiffusion in this material was controlled by a Ga vacancy with a charge of -1.

W.M.Li, R.M.Cohen, D.S.Simons, P.H.Chi: Applied Physics Letters, 1997, 70[25], 3392-4