Monocrystalline wafers of 6H-type material were bombarded with He+, C+ and Si+ ions, at 180 or 190K, to doses ranging from 0.008 to 0.42dpa. The corresponding damage levels ranged from isolated point defect production to complete amorphization. The accumulation of disorder on the Si sub-lattice was monitored in situ by means of Rutherford back-scattering spectroscopic measurements along the <00•1> axial channelling direction. By using simulations and the Kinchin-Pease approximation, the average displacement energy for the Si sub-lattice at each dose was estimated from the damage profile and the integrated disorder concentration. At low defect concentrations, these energies approached the threshold displacement energy for perfect crystals.

Displacement Energy Measurements for Ion-Irradiated 6H-SiC. W.Jiang, W.J.Weber, S.Thevuthasan, D.E.McCready: Nuclear Instruments and Methods in Physics Research B, 1999, 148[1-4], 557-61