Transmission electron microscopic and transmission electron diffraction methods were used to investigate the effect of the V/III ratio upon ordering and antiphase boundaries in organometallic vapor phase epitaxial Ga0.5In0.5P layers which had been grown onto (001)GaAs vicinal substrates at 670C. The results showed that the degree of order was higher in layers which had been grown using a V/III ratio of 160, than in layers which had been grown using a V/III ratio of 40. The transmission electron microscopy results showed that a higher V/III ratio could be used to suppress antiphase boundaries. The growth of order-induced heterostructures, where the V/III ratio was suddenly increased during growth, could be used to block the propagation of antiphase boundaries.

T.Y.Seong, J.H.Kim, Y.S.Chun, G.B.Stringfellow: Applied Physics Letters, 1997, 70[23], 3137-9