The passivating effect of misfit dislocations in an (InAs)1(GaAs)4 strained short-period superlattice on GaAs was investigated by using transmission electron microscopy and electron beam-induced current techniques. Misfit dislocations in <110> directions were generated at the hetero-interface in order to accommodate the misfit strain. They were effectively passivated by atomic H bombardment during growth and cooling. It was found that misfit dislocations in the [110] direction were effectively passivated, rather than those in the [¯110] direction. The desorption temperature of atomic H from the [110] misfit dislocations was higher than that for [¯110] misfit dislocations. These effects were attributed to the fact that the bonding strength of As-H was larger than that of Ga-H.

M.Yokozeki, H.Yonezu, T.Tsuji, N.Ohshima: Journal of Crystal Growth, 1997, 175-176, 435-40