Evidence was presented for the occurrence of anomalously high strain-dependent interdiffusion in InAsP layers which had been grown onto InP(001) substrates by means of organometallic vapor phase epitaxy at 620C. In particular, there were clear indications of the existence of a critical strain. If the strain was equal to about 1.9% or more, marked P-As mixing occurred. At smaller strains, the degree of mixing was greatly reduced. The incidence of interdiffusion was also highly sensitive to the temperature. A set of samples which was prepared at 580C exhibited an approximately 2-fold decrease in P-As mixing, as compared with samples that were prepared at 620C.

D.J.Tweet, H.Matsuhata, P.Fons, H.Oyanagi, H.Kamei: Applied Physics Letters, 1997, 70[25], 3410-2