Measurements were made of the concentration profiles of Al atoms which had been introduced into p-type material by irradiation with a Nd:YAG laser in the continuous wave or Q-switched modes. It was found that limiting concentrations of Al atoms in the Si substrate were attained during irradiation under continuous wave conditions. The concentrations which were measured under irradiation in the Q-switched mode were up to 2 orders of magnitude higher than those which resulted from continuous wave operation.

D.Demireva, B.Lämmel: Journal of Physics D, 1997, 30[14], 1972-5