The transient enhanced diffusion of shallow molecular beam epitaxially grown marker layers of Sb and B, resulting from deep MeV Si+ ion implantation to doses of about 1016/cm2, was measured. It was expected that the near-surface regions of these implanted samples would be vacancy-rich, and transient enhanced diffusion of Sb (a typical vacancy diffuser) was observed. The marked enhancements implied the existence of an appreciable vacancy supersaturation. Double implantation of high-dose MeV-implanted samples, followed by shallow (40keV) Si implantation and annealing, produced a greatly reduced number of {311} defects; as compared with the 40keV implantation of virgin material. This again was considered to be consistent with a vacancy-rich region near to the surface of MeV-implanted samples. The shallow B marker layers also exhibited transient enhanced diffusion, for the same MeV implantation, under similar annealing conditions. This implied that an interstitial supersaturation was present at the same time.

D.J.Eaglesham, T.E.Haynes, H.J.Gossmann, D.C.Jacobson, P.A.Stolk, J.M.Poate: Applied Physics Letters, 1997, 70[24], 3281-3