Single crystals of 6H-type material were bombarded with 550keV C+ ions, at temperatures ranging from 180 to 870K, to fluences of between 1018 and 5 x 1019/m2. The resultant damage ranged from dilute defect concentrations to buried amorphous layers. Damage recovery in samples which had been bombarded at 180K was followed by isochronal annealing (1200s) at 300 to 870K. The accumulation and recovery of atomic disorder on the Si sub-lattice was studied by means of in situ Rutherford back-scattering spectroscopy, combined with ion channelling methods. The disordering rate exhibited a sigmoidal dependence upon dose at each bombardment temperature. Simultaneous defect recovery processes occurred during bombardment at room temperature. Post-bombardment thermal defect recovery was also observed at room temperature.

Damage Formation and Recovery in C+-Irradiated 6H-SiC. W.Jiang, W.J.Weber, S.Thevuthasan, D.E.McCready: Nuclear Instruments and Methods in Physics Research B, 1999, 148[1-4], 562-6