It was recalled that the diffusion of Pt at low temperatures was a convenient method for characterizing vacancy profiles in Si. It was found that the results of experiments on float-zone and Czochralski-type samples, at temperatures ranging from 680 to 842C, disagreed with the predictions of published models. The parameters which governed the diffusion of point defects and Pt in Si were determined for the above temperature range.

M.Jacob, P.Pichler, H.Ryssel, R.Falster: Journal of Applied Physics, 1997, 82[1], 182-91