The delamination of thin layers by ion implantation and annealing was studied in H+- implanted samples. The 100keV H ions were implanted into (100) p-type layers, through a 100nm-thick oxide film, to doses that ranged from 1016 to 1017/cm2. The delamination of thin Si layers was observed, via cross-sectional scanning electron microscopy, at doses above 5.0 x 1016/cm2. Delamination occurred during annealing (485C, 600s) for implantation to 5 x 1016/cm2. This annealing temperature could be reduced to 425 or 400C by increasing the annealing time to 1 or 2h, respectively. The delamination was related to the formation of H-Si defect bonds and to the release of a H atom from these bonds in the H ion-implanted Si layer. The H desorption spectra exhibited peaks at 450 and 650C.

T.Hara, Y.Kakizaki, T.Kihana, S.Oshima, T.Kitamura, K.Kajiyama, T.Yoneda, K.Sekine, M.Inoue: Journal of the Electrochemical Society, 1997, 144[4], L78-80