Changes in the volume of thin specimens and SiC/C composites were measured during He implantation and subsequent annealing. A comparison with proton bombardment showed that displacement defects were responsible for the damage, while implanted He atoms played a minor role. The lattice dilatation and resistivity exhibited differing recovery behaviours, while the annealing of dilatation after implantation and after deformation by polishing was identical. The recovery was tentatively explained in terms of defect kinetics and reactions.

Production and Recovery of Defects in SiC after Irradiation and Deformation. J.Chen, P.Jung, H.Klein: Journal of Nuclear Materials, 1998, 258-263, 1803-8