A model, for H desorption kinetics in SiGe alloys, was presented which was an extended version of a previous model for H desorption from Si. It assumed the presence of 3 dimer types, at the surface, where H atoms tended to pair before desorption. The effect of surface diffusion was included in the model. A comparison with experimental data showed that desorption was a diffusion-limited process.

J.Vizoso, F.Martín, J.Suñé, M.Nafría: Applied Physics Letters, 1997, 70[24], 3287-9