It was recalled that the cause of the degradation of blue/green laser diodes that were based upon ZnSe was the presence of extended crystalline defects. The predominant extended defects originated as stacking faults which were generated at ZnSe/GaAs heterovalent nucleation events, and had densities that were of the order of 106/cm2. A procedure was described here which could reduce the density of such extended defects to a few 1000/cm2 over a 7.5cm-diameter wafer.

T.B.Ng, C.C.Chu, J.Han, G.C.Hua, R.L.Gunshor, E.Ho, E.L.Warlick, L.A.Kolodziejski, A.V.Nurmikko: Journal of Crystal Growth, 1997, 175-176, 552-7