The spatial distribution of polarized cathodoluminescence emissions from thin ZnSe films which had been grown, using metalorganic vapor phase epitaxy, onto GaAs(001) was studied by means of low-temperature polarized cathodoluminescence measurements and transmission electron microscopy. It was found that emissions arose from regions which were near to dislocation tangles or individual dislocations. The cathodoluminescence images exhibited changes in intensity distribution when the polarization condition was changed. The observations suggested that the polarization direction of the emissions was parallel to the dislocation line.

T.Mitsui, N.Yamamoto: Journal of Applied Physics, 1997, 81[11], 7492-6