The implantation of B into n-type 6H-type material was investigated. The implantation was carried out, using single crystals, at room temperature or 500C. The implanted specimens were annealed at 1700C in a SiH4 atmosphere. The lattice damage which was introduced by implantation and its recovery was characterized by means of Raman scattering. The net B concentration, and the degree of damage that was created, were predicted by TRIM simulations. The redistribution of the implanted atoms during high-temperature annealing was estimated by simulating the diffusion process. The capacitance-voltage characteristics of Ni/6H-SiC Schottky barriers were numerically simulated for various assumed B-incorporation lattice sites. A comparison of experimentally obtained dopant concentrations, with those predicted by simulation, showed that the concentration of electrically active acceptors was affected by the out-diffusion of B due to the high annealing temperature of 1700C. A reduced damage, as compared with other ion implantations was observed. Recrystallization of the implanted material and an absence of amorphous phases were detected after high-temperature annealing.

B Implantation into 6H-SiC: Lattice Damage Recovery and Implant Activation upon High-Temperature Annealing. E.Valcheva, T.Paskova, I.G.Ivanov, R.Yakimova, Q.Wahab, S.Savage, N.Nordell, C.I.Harris: Journal of Vacuum Science and Technology B, 1999, 17[3], 1040-4