Bipolar diodes were fabricated by means of N-implantation, with subsequent annealing at 1100C and passivation with a deposited oxide. Capacitance-voltage and current voltage measurements were used to analyze the quality of the junction. Admittance spectroscopy revealed the presence of 3 peaks. Two of these corresponded to N and Al shallow levels. The third was studied more precisely by means of deep-level transient spectroscopy. It had an activation energy of Ev + 0.49eV, and was suggested to be a hole trap which was created by the N implantation.

Electrical Characterization of Silicon Carbide n+pp+ Diodes with an N-Implanted n+ Emitter. C.Raynaud, K.Ghaffour, S.Ortolland, M.L.Locatelli, K.Souifi, G.Guillot, J.P.Chante: Journal of Applied Physics, 1998, 84[6], 3073-7