Epitaxial CoSi2/n-type Si (111) interfaces were studied by means of  in situ  ballistic-electron emission microscopy at 77K. The scattering of hot electrons by individual misfit dislocations and point defects produced appreciable contrast in the images; thus proving that interfacial defects of atomic dimensions could be studied by using this technique. It was noted that the Schottky barrier height was not noticeably affected by the defects. However, the presence of grains of metastable CoSi2 with a defective CsCl structure could appreciably lower the barrier.

H.Von Känel, T.Meyer, H.Sirringhaus: Journal of Crystal Growth, 1997, 175-176, 340-5