The diffusivity of Cd in thin-film samples was studied at temperatures ranging from 165 to 345C. The films were deposited by means of flash evaporation, and a thin Cd film was deposited before annealing at various temperatures. The depth profiles of Cd were determined by using the Rutherford back-scattering technique, and were fitted by using the complementary error function. The resultant data (table 6) could be described by:

D (m2/s) = 2.38 x 10-13exp[-0.47(eV)/kT]

It was shown that the Cd diffused via Cu vacancies.

A.P.Kumar, K.V.Reddy: Semiconductor Science and Technology, 1997, 12[8], 966-9

Table 6

Diffusivity of Cd in CuInSe2 Thin Films