The trapping and thermal emission of holes from a deep acceptor level which was created during thermal annealing was studied. The Cd0.88Zn0.12Te crystals were grown by using the high-pressure Bridgman technique, and were studied by means of thermoelectric effect spectroscopy and thermally stimulated current experiments. The deep level, which was usually absent from as-grown high-pressure Bridgman CdZnTe crystals, was attributed to the 2-l- acceptor level of Cd (Zn) vacancies. The thermal ionization energy of the level was 0.43eV, and the trapping cross-section of the holes was 2.0 x 10-16/cm2.

C.Szeles, Y.Y.Shan, K.G.Lynn, A.R.Moodenbaugh, E.E.Eissler: Physical Review B, 1997, 55[11], 6945-9