The space charge transients of a deep-level defect, as characterized by Auger capture, were investigated with regard to capacitance-voltage and deep-level transient spectroscopic measurements of various DX doped samples. It was shown that, as compared with a defect which exhibited the usual single electron capture process, such defects exhibited a fundamentally different behavior. Previous experiments had suggested that the DX shallow-deep transition was such a process. The main features of the space charge structure and typical properties of the capacitance measurements were analyzed. It was found that the usual C-V measurements could be evaluated only for rather shallow centers of this type. It was noted that conventional deep-level transient spectroscopic techniques, with electrical pulse excitation, offered limited efficiency in the detection of such centers, and evaluation of the measured deep-level transient spectroscopic data required a new model. The characteristic behavior of such centers in transient measurements was illustrated by transient measurements of DX doped samples. Such centers belonged to a poorly understood group of defects which could limit device life, or the minority carrier lifetime in III-V compounds.

L.Dózsa: Solid-State Electronics, 1997, 41[4], 585-90