The effect of -particles irradiation, and subsequent isochronal annealing, upon n-type Si-doped material was investigated. Photoluminescence studies revealed the formation of an induced radiation center at 1.486eV. Capacitance-voltage measurements indicated a slight reduction in the number of n-type carriers in treated samples, and deep-level transient spectra revealed a number of commonly observed deep levels in as-irradiated samples. These disappeared during annealing. On the basis of this evidence, it was proposed that the 1.486eV band was due to a donor-acceptor pair transition.

H.W.Kunert, D.J.Brink: Journal of Applied Physics, 1997, 81[10], 6948-53