The effect of nuclear and electronic energy losses upon damage production was studied by means of Se+ ion implantation at 293K, using energies that ranged from 2 to 20MeV and doses of between 5 x 1012 and 1015/cm2. Damage production was investigated by using Rutherford back-scattering spectroscopy in the channelling mode. Temperature-change and variable energy back-scattering measurements and transmission electron microscopic  investigations were used to study the resultant defects in more detail. The defect profiles were compared with simulated depth distributions of nuclear and electronic energy losses. The results showed that the remaining defect concentration decreased markedly with increasing implantation energy; even if the same energy density was deposited as nuclear processes. It was proposed that electronic energy losses increased defect transformation and annealing during implantation at 293K. The defects in samples which had been implanted using energies greater than 5MeV were characterized as being point defects, point defect clusters and small dislocation loops. The defect types were the same over the entire implantation depth, and no amorphous zones were detected.

O.Herre, E.Wendler, N.Achtziger, T.Licht, U.Reislöhner, M.Rüb, T.Bachmann, W.Wesch, P.I.Gaiduk, F.F.Komarov: Nuclear Instruments and Methods in Physics Research B, 1996, 120[1-4], 230-5